ELECTROSTATIC CHUCK AND BASE FOR PLASMA REACTOR HAVING IMPROVED WAFER ETCH RATE
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United States of America Patent
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Issued Date -
Oct 28, 2010
app pub date -
Jul 14, 2009
filing date -
Apr 24, 2009
priority date (Note) -
Abandoned
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Abstract
An electrostatic chuck device in which the electrostatic chuck and support are made from high resistivity, high thermal conductivity and low RF energy loss dielectric materials is described. An advantage of this electrostatic chuck device is that the wafer surface electromagnetic field distribution is more uniform than conventional electrostatic chuck devices. As a result, the wafer etch rate, especially the wafer edge etch rate non-uniformity, is significantly improved compared with conventional electrostatic chuck devices.
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