Semiconductor element and method of making same
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United States of America Patent
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app pub date -
Jul 6, 2010
filing date -
Dec 14, 2005
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Abstract
A semiconductor element includes a substrate including gallium oxide and having a predetermined plane direction, and a semiconductor layer formed on the substrate, in which, the semiconductor element is in chip form and further includes a first end face formed along a cleaved surface of the substrate and a second end face formed perpendicular to the first end face, wherein the first end face has a stronger cleavage property than the second end face.
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