PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON SUBSTRATE AND POLYCRYSTALLINE SILICON SUBSTRATE
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United States of America Patent
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Issued Date -
Oct 28, 2010
app pub date -
Nov 28, 2008
filing date -
Dec 4, 2007
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Abandoned
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Abstract
Provided are: a safe, low-cost method of producing a polycrystalline silicon substrate excellent in photoelectric conversion efficiency by which a uniform, fine uneven structure suited to a solar cell can be simply formed on the surface of the polycrystalline silicon substrate; and a polycrystalline silicon substrate having a uniform, fine, pyramid-shaped uneven structure so that its reflectance can be significantly reduced. The uneven structure is formed on the surface of the polycrystalline silicon substrate by etching the polycrystalline silicon substrate with an alkaline etching solution containing at least one kind selected from the group consisting of a carboxylic acid having 1 or more and 12 or less carbon atoms and each having at least one carboxyl group in one molecule, and salts of the acids.
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