METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND A SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Oct 7, 2010
app pub date -
Jul 18, 2008
filing date -
Jul 20, 2007
priority date (Note) -
Abandoned
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Abstract
A method of manufacturing a semiconductor device comprises the steps of, in sequence: depositing a first silicon layer; patterning the first silicon layer to obtain a first silicon region; implanting a first dopant into a first part of the first silicon region, the first part of the first silicon region defined using a first mask; depositing a second silicon layer; patterning the second silicon layer to obtain a second silicon region; and implanting a second dopant into a second part of the first silicon region, the second part of the first silicon region defined by the first mask and the second silicon region.).
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