STRUCTURE AND FABRICATING PROCESS OF NON-VOLATILE MEMORY
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United States of America Patent
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Issued Date -
Oct 7, 2010
app pub date -
Apr 3, 2009
filing date -
Apr 3, 2009
priority date (Note) -
Abandoned
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Abstract
A structure of a non-volatile memory is described, including a substrate, isolation structures disposed in and protrudent over the substrate, floating gates as conductive spacers on the sidewalls of the isolation structures protrudent over the substrate, and a tunneling layer between each floating gate and the substrate. A process for fabricating a non-volatile memory is also described. Isolation structures are formed in a substrate protrudent over the same, a tunneling layer is formed over the substrate, and then floating gates are formed as conductive spacers on the sidewalls of the first isolation structures protrudent over the substrate.
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