TRENCHED METAL-OXIDE-SEMICONDUCTOR DEVICE AND FABRICATION THEREOF
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United States of America Patent
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Issued Date -
Sep 30, 2010
app pub date -
Mar 30, 2009
filing date -
Mar 30, 2009
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Abandoned
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Abstract
A fabrication method of a trenched metal-oxide-semiconductor device is provided. After the formation of the gate dielectric layer, a first poly-silicon layer is deposited along the profile of the gate trench. Then, impurities of first conductivity type are implanted to the first poly-silicon layer at the bottom of the gate trench. Then, a second poly-silicon layer with second conductivity type is deposited over the first poly-silicon layer. The impurities in the first poly-silicon layer and the second poly-silicon layer are then driven by an annealing step to form a first doping region with first conductivity type located at the bottom of the gate trench and a second doping region with second conductivity type.
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