Double heterojunction bipolar transistor having graded base region
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United States of America Patent
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Issued Date -
Sep 30, 2010
app pub date -
Mar 31, 2009
filing date -
Mar 31, 2009
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Abandoned
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Abstract
A semiconductor device comprises: a heterojunction, comprises a first region comprising a first III-V semiconductor; a second region adjacent to the first region and comprising a second III-V semiconductor material, wherein the second III-V semiconductor material comprises a material of graded concentration over a width of the second region; and a third region adjacent to the second region and comprising a third III-V semiconductor material, wherein the graded concentration is selection to provide substantially no conduction band discontinuity at a junction of the second region and the third region, or to provide a type I semiconductor junction at the junction of the second region and the third region.
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