CIGS Solar Cell Structure And Method For Fabricating The Same
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United States of America Patent
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Issued Date -
Sep 23, 2010
app pub date -
Mar 19, 2009
filing date -
Mar 19, 2009
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Abandoned
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Abstract
A copper/indium/gallium/selenium (CIGS) solar cell structure and a method for fabricating the same are provided. The CIGS solar cell structure includes a substrate, a molybdenum thin film layer, an alloy thin film layer, and a CIGS thin film layer. According to the present invention, the alloy thin film layer is provided between the molybdenum thin film layer and the CIGS thin film layer, serving as a conductive layer of the CIGS solar cell structure. The alloy thin film layer is composed of a variety of high electrically conductive materials (such as molybdenum, copper, aluminum, and silver) in different proportions.
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