SRAM leakage reduction circuit
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United States of America Patent
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Dec 13, 2011
Grant Date -
Sep 16, 2010
app pub date -
Feb 12, 2010
filing date -
Apr 28, 2006
priority date (Note) -
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Abstract
of the memory cell transistors in the SRAM array, the circuit reduces leakage current while maintaining data integrity. A threshold voltage reference circuit can include one or more memory cell transistors (in parallel), or a specially wired memory cell to track the memory cell transistor threshold voltage. The value of the virtual ground reference voltage can be based on a ratio of feedback chain elements in a multiplier circuit.
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