Non-volatile Memory Array Having Circuitry To Complete Programming Operation In The Event Of Power Interrupt

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United States of America Patent

APP PUB NO 20100226170A1
SERIAL NO

12398913

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Abstract

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An electrically programmable non-volatile memory device comprises a memory circuit which includes an array of non-volatile memory cells. Each memory cell is capable of being programmed. A programming circuit can generate a programming signal to program one or more of the memory cells. A voltage detector circuit is connected to a voltage source which outputs a certain voltage. The voltage detector circuit detects when the certain voltage has decreased to a certain level, and in response thereto, the voltage detector provides an output signal to the memory controller to complete the on-going programming command sequence and to power down itself. An auxiliary voltage source maintains voltage to the memory circuit for a period of time sufficient for the programming circuit to complete the programming of the one or more of the memory cells, when the certain voltage is at or below the certain level.

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Patent Owner(s)

Patent OwnerAddress
GREENLIANT LLC3970 FREEDOM CIRCLE SUITE 100 SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Deng, Tingniu San Jose, US 1 9
Lin, Fong-Long Fremont, US 22 303

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