METHOD FOR MANUFACTURING A DUAL WORK FUNCTION SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE MADE THEREOF
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United States of America Patent
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Issued Date -
Sep 2, 2010
app pub date -
Jan 8, 2010
filing date -
Jan 9, 2009
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Abandoned
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Abstract
A method for manufacturing a dual work function device is disclosed. In one aspect, the process includes a first and second region in a substrate. The method includes forming a first transistor in the first region which has a first work function. Subsequently, a second transistor is formed in the second region having a different work function. The process of forming the first transistor includes providing a first gate dielectric stack having a first gate dielectric layer and a first gate dielectric capping layer on the first gate dielectric layer, performing a thermal treatment to modify the first gate dielectric stack, the modified first gate dielectric stack defining the first work function, providing a first metal gate electrode layer on the modified first gate dielectric stack, and patterning the first metal gate electrode layer and the modified first gate dielectric stack.
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