Importance

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Abstract

Bonded wafers are produced by a method including a step (S1) of bonding together a wafer for supporting and a wafer for active layer, thereby forming a bonded body, a step (S2) of fabricating the wafer for active layer of the bonded body, thereby forming the active layer having a first thickness, a step (S3) of sticking a plurality of the bonded bodies having the active layer formed thereon to a polishing plate and polishing the active layer down to a second thickness, a step (S4) of optically measuring the second thickness while keeping the polished bonded bodies stuck to the polishing plate, and a step (S5) of polishing again the active layer down to a third thickness in response to the second thickness measured previously.

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First Claim