Photomask for the Fabrication of a Dual Damascene Structure and Method for Forming the Same
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United States of America Patent
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Issued Date -
Aug 26, 2010
app pub date -
Sep 6, 2006
filing date -
Sep 15, 2005
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Abandoned
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Abstract
A photomask for the fabrication of dual damascene structures and a method for forming the same are provided. A method for fabricating a multilayer step-and-print lithography (SFIL) template includes providing a blank having a substrate, an absorber layer and a first resist layer. A metal layer pattern of a dual damascene structure is formed in the substrate at a first depth using a lithography system. The first resist layer is removed from the blank and a second resist later is applied. The lithography system is used to form a via layer pattern of the dual damascene structure at the first depth while the metal layer pattern is simultaneously etched to a second depth.
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