PHOTOSENSORS INCLUDING SEMICONDUCTOR-ON-INSULATOR STRUCTURE
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United States of America Patent
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Feb 26, 2009
filing date -
Feb 26, 2009
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Abstract
Photosensor based on SOI technology and display devices comprising the same. The photosensor can be a photodiode or a phototransistor, or a combination thereof when incorporated in a device. The photosensor exhibits a higher photoresponse than a traditional photosensor based on amorphous silicon film or polysilicon thin film technology. The present invention is useful, e.g., in making multifunctional display devices having photosensing function integrated therein.
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