METHOD FOR FORMING SILICON-BASED THIN FILM BY PLASMA CVD METHOD
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United States of America Patent
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Issued Date -
Aug 19, 2010
app pub date -
Oct 29, 2007
filing date -
Nov 9, 2006
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Abandoned
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Abstract
In the method for forming a silicon-based thin film by the plasma CVD method using high-frequency excitation, a polycrystalline silicon-based thin film having high degree of crystallization is formed relatively at a low temperature, economically, and productively.or higher; and the combination of those pressures and the like is such a combination that attains the ratio (Ic/Ia=degree of crystallization) of Ic derived from the crystallized silicon component to Ia derived from the amorphous silicon component in the evaluation of the crystallizability of silicon in the film by the laser Raman scattering spectroscopy is 8 or higher.
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