Epitaxial Lift Off in Inverted Metamorphic Multijunction Solar Cells
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United States of America Patent
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Issued Date -
Aug 12, 2010
app pub date -
Feb 9, 2009
filing date -
Feb 9, 2009
priority date (Note) -
Abandoned
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Abstract
A process for selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown, by providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a surrogate substrate on top of the sequence of layers; attaching a connecting link element to at least two opposed points on the periphery of the surrogate substrate; and etching said separation layer while applying tension to said link element so as to remove said epitaxial layer from said first substrate.
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