DEPOSITION METHOD AND DEPOSITION APPARATUS FOR NITRIDE FILM

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United States of America Patent

APP PUB NO 20100203246A1
SERIAL NO

12669575

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Abstract

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A deposition method of depositing a nitride film, including steps of introducing one or more nitrogen supplying gas selected from hydrazine and nitrogen oxides into a catalyst reaction apparatus; enabling a reactive gas generated by contacting the nitrogen supplying gas with catalyst to be spouted out from the catalyst reaction apparatus; and reacting the reactive gas with a compound gas, thereby depositing a nitride film on a substrate is disclosed.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325
NATIONAL UNIVERSITY CORPORATION NAGAOKA UNIVERSITY OF TECHNOLOGY1603-1 KAMITOMIOKA-MACHI NAGAOKA-SHI NIIGATA-KEN 940-2188

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inoue, Yasunobu Niigata, JP 64 135
Nishiyama, Hiroshi Niigata, JP 80 716
Tamura, Kazuyuki Niigata, JP 15 124
Yasui, Kanji Niigata, JP 5 12

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