IMAGE SENSOR OF STACKED LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Aug 5, 2010
app pub date -
Jun 9, 2008
filing date -
Jun 8, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Provided is a stacked image sensor. Particularly, provided are a stacked image sensor including a photosensitive element portion having a photo-conductive thin film on an upper portion of a wafer where a peripheral circuit is formed and a method of manufacturing the stacked image sensor. In the stacked image sensor according to the present invention, since a wafer where a circuit is formed and a photosensitive element portion are formed in a stacked structure, a whole size of the image sensor can be reduced, and there is no optical crosstalk due to absorption of incident light to adjacent pixels. In addition, since a photo-conductive element having a high light absorbance is used, a high photo-electric conversion efficiency can be obtained. In addition, in the method of manufacturing a stacked image sensor according to the present invention, since the upper photosensitive element can be formed by using a simple low-temperature process, a production cost can be reduced.
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