METHOD FOR PROCESSING SILICON BASE MATERIAL, ARTICLE PROCESSED BY THE METHOD, AND PROCESSING APPARATUS

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United States of America Patent

APP PUB NO 20100193362A1
SERIAL NO

12451357

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a state where a silicon base material (1) is used as an anode, a fine platinum member (2) is used as a cathode, and an electrolyte solution (4) is arranged between the anode and the cathode, anodic oxidation is performed in constant current mode under the conditions where porous formation mode and electrolytic polishing mode coexist. The platinum member (2) is fitted in the silicon base material (1) with silicon elution, and processes such as hole making, cutting, single-side pressing are performed. Since the silicon base material can be processed at a room temperature with small energy, the crystal quality of the processing surface is not deteriorated. Thus, efficient and highly accurate processing can be performed without using a mechanical method, which consumes much material in conventional processes such as cutting of solar cell silicon base material, and without using laser whose energy unit cost is high, and furthermore, without leaving a crystal damage on a processed surface.

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Patent Owner(s)

Patent OwnerAddress
QUANTUM 14 KK208 TUAT TAMA & KOGANEI VENTURE PORT 2-24-16 NAKA-CHO KOGANEI-SHI TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gelloz, Bernard Tokyo, JP 5 13
Kanehori, Keiichi Saitama, JP 11 262
Koshida, Nobuyoshi Tokyo, JP 26 290
Shimada, Toshikazu Tokyo, JP 27 736
Warabisako, Terunori Tokyo, JP 21 693

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