APPARATUS, METHOD FOR DEPOSITING THIN FILM ON WAFER AND METHOD FOR GAP-FILLING TRENCH USING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 29, 2010
app pub date -
Jul 14, 2008
filing date -
Jul 19, 2007
priority date (Note) -
Abandoned
status (Latency Note)
![]() |
A preliminary load of PAIR data current through [] has been loaded. Any more recent PAIR data will be loaded within twenty-four hours. |
PAIR data current through []
A preliminary load of cached data will be loaded soon.
Any more recent PAIR data will be loaded within twenty-four hours.
![]() |
Next PAIR Update Scheduled on [ ] |

Importance

US Family Size
|
Non-US Coverage
|
Abstract
Provided are an apparatus and method for depositing a thin film, and a method for gap-filling a trench in a semiconductor device. The thin film depositing apparatus includes a plurality of substrates provided on the same space inside a reactor, wherein deposition of the thin film and partial etching of the deposited thin film are repeated to form the thin film on the plurality of substrates by exposing the substrates to two or more source gases and an etching gas supplied together at predetermined time intervals while rotating the substrates. According to exemplary embodiments, it is possible to concurrently or alternatively perform deposition and etching of a thin film, so that a thin film with good gap-fill capability can be deposited.
First Claim
all claims..Other Claims data not available
Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
---|---|---|---|---|---|
KR | B1 | KR100905278 | Jul 19, 2007 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
PATENT SPECIFICATION | Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same | Jun 29, 2009 | |||
CN | B | CN101809711 | Jul 14, 2008 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
GRANTED PATENT FOR INVENTION | Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same | Jan 11, 2012 | |||
WO | A2 | WO2009011532 | Jul 14, 2008 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
INTERNATIONAL APPLICATION PUBLISHED WITHOUT INTERNATIONAL SEARCH REPORT or INTERNATIONAL APPLICATION PUBLISHED WITH DECLARATION UNDER ARTICLE 17 (2) (A) | APPARATUS, METHOD FOR DEPOSITING THIN FILM ON WAFER AND METHOD FOR GAP-FILLING TRENCH USING THE SAME | Jan 22, 2009 | |||
TW | B | TWI493654 | Jul 17, 2008 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
GRANTED PATENT OR PATENT OF ADDITION | Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same | Jul 21, 2015 |
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
WONIK IPS CO LTD | 75 JINWISANDAN-RO JINWI-MYEON PYEONGTAEK-SI GYEONGGI-DO 17709 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Han, Chang-Hee | Chungbuk, KR | 7 | 176 |
# of filed Patents : 7 Total Citations : 176 | |||
Jeong, Seong-Hoe | Chungnam, KR | 1 | 44 |
# of filed Patents : 1 Total Citations : 44 | |||
Lee, Ho-Young | Daejeon, KR | 131 | 1578 |
# of filed Patents : 131 Total Citations : 1578 | |||
Park, Sang-Jun | Kyungki-do, KR | 52 | 433 |
# of filed Patents : 52 Total Citations : 433 |
Cited Art Landscape
- No Cited Art to Display

Patent Citation Ranking
- 44 Citation Count
- H01L Class
- 84.11 % this patent is cited more than
- 15 Age
Forward Cite Landscape
- No Forward Cites to Display

Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
---|
Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text

Legal Events
- No Legal Status data available.

Matter Detail

Renewals Detail
