APPARATUS, METHOD FOR DEPOSITING THIN FILM ON WAFER AND METHOD FOR GAP-FILLING TRENCH USING THE SAME

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United States of America Patent

APP PUB NO 20100190341A1
SERIAL NO

12669498

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Abstract

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Provided are an apparatus and method for depositing a thin film, and a method for gap-filling a trench in a semiconductor device. The thin film depositing apparatus includes a plurality of substrates provided on the same space inside a reactor, wherein deposition of the thin film and partial etching of the deposited thin film are repeated to form the thin film on the plurality of substrates by exposing the substrates to two or more source gases and an etching gas supplied together at predetermined time intervals while rotating the substrates. According to exemplary embodiments, it is possible to concurrently or alternatively perform deposition and etching of a thin film, so that a thin film with good gap-fill capability can be deposited.

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WONIK IPS CO LTD75 JINWISANDAN-RO JINWI-MYEON PYEONGTAEK-SI GYEONGGI-DO 17709

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Chang-Hee Chungbuk, KR 7 176
Jeong, Seong-Hoe Chungnam, KR 1 44
Lee, Ho-Young Daejeon, KR 131 1578
Park, Sang-Jun Kyungki-do, KR 52 433

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