METHOD OF FORMING HARDMASK BY PLASMA CVD
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United States of America Patent
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Issued Date -
Jul 29, 2010
app pub date -
Jan 29, 2009
filing date -
Jan 29, 2009
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Abstract
A method of forming a transparent hardmask by plasma CVD includes: providing an underlying layer formed on a substrate in a reaction space; introducing an inert gas into the reaction space; introducing a hydrocarbon precursor vapor of an aromatic compound into the reaction space, wherein a flow ratio of the hydrocarbon precursor vapor to the inert gas is less than 0.1; and applying RF power to the reaction space, thereby depositing on the underlying layer a transparent hardmask having a film stress of −300 MPa to 300 MPa.
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