INSULATED WELL WITH A LOW STRAY CAPACITANCE FOR ELECTRONIC COMPONENTS
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United States of America Patent
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Issued Date -
Jul 29, 2010
app pub date -
Jan 20, 2010
filing date -
Jan 23, 2009
priority date (Note) -
Abandoned
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Abstract
A structure including at least one electronic component formed in a semiconductor stack comprising a heavily-doped buried silicon layer of a first conductivity type extending on a lightly-doped silicon substrate of a second conductivity type and a vertical insulating trench surrounding the component. The trench penetrates, into the silicon substrate, under the silicon layer, down to a depth greater than the thickness of the space charge region in the silicon substrate.
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