CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS

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United States of America Patent

APP PUB NO 20100186774A1
SERIAL NO

12671189

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Abstract

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Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%.

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Patent Owner(s)

Patent OwnerAddress
HITACHI KOKUSAI ELECTRIC INC14-1 SOTOKANDA 4-CHOME CHIYODA-KU TOKYO 1018980
KANTO DENKA KOGYO CO LTDCHIYODA-KU TOKYO 100-0005

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Miya, Hironobu Toyama, JP 22 1564
Sakai, Masanori Toyama, JP 222 4724
Sasaki, Shinya Toyama, JP 124 2605
Suda, Atsuhiko Toyama, JP 15 868
Takebayashi, Yuji Toyama, JP 60 2734
Tanioka, Takashi Gunma, JP 8 66
Yamazaki, Hirohisa Toyama, JP 45 980

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