METHOD FOR PROTECTING SEMICONDUCTOR WAFER AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jul 22, 2010
app pub date -
Jun 20, 2008
filing date -
Jun 22, 2007
priority date (Note) -
Abandoned
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Abstract
[Task] In a proposed protection method, re-oxidation of a semiconductor wafer is prevented. The method is appropriate for fine patterned semiconductor device. A wafer is dry etched and is subjected to a next step of forming an electrode material film. The dry-etched wafer is maintained not re-oxidized until the next step. The dry etching reaction products are appropriately removed.[Means for Solution] A wafer, on which the dry etching reaction products remain, is protected by the reaction products. The wafer is held in an inert gas protective atmosphere having a pressure of 50 Pa or more and an atmospheric pressure or less, or is held in air equivalent to the air of a clean room or in a gas-mixture atmosphere of said air and an inert gas. The reaction products are decomposed and removed by heating immediately before the formation of an electrode-material film.
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