Method of Making an Epitaxial Structure Having Low Defect Density
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United States of America Patent
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Issued Date -
Jul 22, 2010
app pub date -
Jan 15, 2010
filing date -
Jan 21, 2009
priority date (Note) -
Abandoned
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Abstract
A method of making an epitaxial structure includes: (a) forming laterally a first epitaxial layer on a base layer, the first epitaxial layer having an epitaxial surface; (b) etching the first epitaxial layer using a wet etching agent so that the epitaxial surface has a plurality of first recesses; (c) depositing on the first epitaxial layer a defect-termination layer; and (d) removing the defect-termination layer by a chemical mechanical polishing process, thereby forming a plurality of defect-termination blocks that respectively and fill the first recesses, wherein the defect-termination blocks have polished surfaces that are substantially flush with the epitaxial surface.
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