CONTACT STRUCTURE FOR A SEMICONDUCTOR AND METHOD FOR PRODUCING THE SAME
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United States of America Patent
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Issued Date -
Jul 22, 2010
app pub date -
Jun 19, 2008
filing date -
Jul 10, 2007
priority date (Note) -
Abandoned
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Abstract
A semiconductor component comprising a substrate with a first side and a second side a multi-layer contact structure arranged on at least one side of the substrate, the contact structure exhibiting a barrier layer to prevent the diffusion of ions from the side of barrier layer opposite to the substrate into the substrate.
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