LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION
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United States of America Patent
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Issued Date -
Jul 22, 2010
app pub date -
Jul 11, 2006
filing date -
Jul 11, 2005
priority date (Note) -
Abandoned
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Abstract
A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
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