METHOD FOR TREATMENT OF A GAS STREAM CONTAINING SILICON TETRAFLUORIDE AND HYDROGEN CHLORIDE

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United States of America Patent

APP PUB NO 20100178225A1
SERIAL NO

12731847

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Abstract

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The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport.

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Patent Owner(s)

Patent OwnerAddress
MEMC ELECTRONIC MATERIALS INCST PETERS MISSOURI 63376

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ibrahim, Jameel Humble, US 18 154
Revankar, Vithal Seabrook, US 18 97

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