GUNN DIODE
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United States of America Patent
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N/A
Issued Date -
Jul 1, 2010
app pub date -
Jan 31, 2008
filing date -
Feb 9, 2007
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A Gunn diode includes an active layer having a top and a bottom, a first contact layer disposed adjacent to the top of the active layer, a second contact layer disposed adjacent to the bottom of the active layer, wherein the first and second contact layers are more heavily doped than the active layer, and at least one outer contact layer disposed at an outer region of at least one of the first and second contact layers, the at least one outer contact layer being more heavily doped than the first and second contact layers, wherein the first and second contact layers, the active layer, and the at least one outer contact layer include a base material that is the same.
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