METHOD AND APPARATUS FOR GROWING HIGH QUALITY SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL INGOT GROWN THEREBY AND WAFER PRODUCED FROM THE SAME SINGLE CRYSTAL INGOT
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United States of America Patent
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Feb 24, 2009
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Jul 26, 2005
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Abstract
The invention relates to a technique for producing a high quality Si single crystal ingot with a high productivity by the Czochralski method. The technique of the invention can control the magnetic field strength of an oxygen dissolution region different from that of a solid-liquid interface region in order to control the oxygen concentration at a desired value.
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