METHOD FOR THE SELECTIVE ANTIREFLECTION COATING OF A SEMICONDUCTOR INTERFACE BY A PARTICULAR PROCESS IMPLEMENTATION
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United States of America Patent
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Issued Date -
Jun 24, 2010
app pub date -
Jun 16, 2007
filing date -
Jun 17, 2006
priority date (Note) -
Abandoned
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Abstract
The invention refers to an efficient process for selectively rendering a semiconductor surface antireflective which is part of integrated circuits. The antireflective effect is based interference effects of a simple layer or a layer system. For example, an oxide layer and super-imposed silicon nitride layer form the system, wherein the silicon nitride layer is deposited in an earlier phase of the fabrication of the integrated circuit as a protective layer (“silicide block layer”) and also serves as an etch stop layer for the optical window.
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