EPITAXIAL WAFER AND METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Jun 24, 2010
app pub date -
Nov 16, 2009
filing date -
Dec 24, 2008
priority date (Note) -
Abandoned
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Abstract
An epitaxial wafer and method for fabricating the same can prevent a bowing phenomenon of the epitaxial wafer. The epitaxial wafer includes a substrate configured to be doped in a first doping concentration; an epitaxial layer configured to be formed over a first side of the substrate and doped in a second doping concentration lower than the first doping concentration; and a back seal layer configured to be formed over a second side of the substrate and include a layer having a tensile stress, wherein the second side is opposite to the first side, of the substrate.
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