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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
SCHNEIDER GMBH & CO KG	SIEMENSSTRASSE 13-19 96465 NEUSTADT B COBURG

International Classification(s)

• B24B:MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR PO....

• 2009 Application Filing Year
• B24B Class
• 470 Applications Filed
• 337 Patents Issued To-Date
• 71.71 % Issued To-Date

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Buchenauer, Helwig	Dautphetal-Buchenau, DE	29	109
# of filed Patents : 29 Total Citations : 109
Huttenhuis, Stephan	Marburg, DE	21	42
# of filed Patents : 21 Total Citations : 42
Krämer, Klaus	Dautphetal-Friedensdorf, DE	32	76
# of filed Patents : 32 Total Citations : 76
Schneider, Gunter	Marburg, DE	89	394
# of filed Patents : 89 Total Citations : 394

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Patent Citation Ranking

• 2 Citation Count
• B24B Class

• 5.15 % this patent is cited more than
• 15 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2018/0033,745

SEMICONDUCTOR DEVICE HAVING A DUAL MATERIAL REDISTRIBUTION LINE AND METHOD OF FORMING THE SAME

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Abstract

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A semiconductor device includes a first passivation layer over an interconnect structure. The semiconductor device further includes a first redistribution line (RDL) via extending through an opening in the first passivation layer to electrically connect to the interconnect structure. The first RDL via includes a first conductive material. The semiconductor device further includes an RDL over the first passivation layer and electrically connected to the first RDL via. The RDL comprises a second conductive material different from the first conductive material. The RDL extends beyond the first RDL via in a direction parallel to a top surface of the first passivation layer.

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Description

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Claims

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