METHOD OF FORMING LOW-K FILM HAVING CHEMICAL RESISTANCE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 17, 2010
app pub date -
Dec 11, 2008
filing date -
Dec 11, 2008
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Loading Importance Indicators... 
Abstract
A method of forming a low-k film containing silicon and carbon on a substrate by plasma CVD, includes: supplying gas of a precursor having a Si—R—O—R—Si bond into a reaction space in which a substrate is placed; and exciting the gas in the reaction space, thereby depositing a film on the substrate.
Loading the Abstract Image...
OK
First Claim
Family
Loading Family data...
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully