SEMICONDUCTOR DEVICE STORAGE CELL STRUCTURE, METHOD OF OPERATION, AND METHOD OF MANUFACTURE
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United States of America Patent
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Feb 22, 2010
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May 1, 2007
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Abstract
A method of fabricating an integrated circuit device storage cell may include forming a channel region comprising a semiconductor material doped to a first conductivity type; forming a store gate structure comprising a semiconductor material doped to a second conductivity type in contact with the channel region; and forming a control gate terminal from at least a portion of a semiconductor layer deposited on a substrate surface in contact with the channel region, the portion of the semiconductor layer being doped to the second conductivity type.
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