METHODS AND APPARATUS FOR CHEMICAL-MECHANICAL POLISHING UTILIZING LOW SUSPENDED SOLIDS POLISHING COMPOSITIONS
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United States of America Patent
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Issued Date -
Jun 10, 2010
app pub date -
Dec 7, 2009
filing date -
Dec 5, 2008
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Abandoned
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Abstract
The present invention provides chemical-mechanical polishing (CMP) methods and apparatus suitable for polishing a substrate utilizing a low suspended solids slurry composition. The CMP methods of the invention comprise polishing a substrate with CMP slurry containing a low suspended solids level (e.g., about 0.01 percent by weight to about 1.0 percent by weight) of a particulate abrasive material in a CMP apparatus, while continuously monitoring and accurately maintaining a predetermined total suspended solids (TSS) level in the slurry. Preferably, maximum TSS variability of the slurry is less than about 20 percent (i.e., ±20% of the target TSS level), more preferably less than about 10 percent TSS variability (i.e., ±10% of the target TSS level) during the course of the polishing process.
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