NANOSTRUCTURES FOR DISLOCATION BLOCKING IN GROUP II-VI SEMICONDUCTOR DEVICES
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United States of America Patent
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Issued Date -
Jun 10, 2010
app pub date -
Dec 10, 2008
filing date -
Dec 10, 2008
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Abandoned
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Abstract
A compound semiconductor workpiece with reduced defects and greater strength that uses Group II-VI semiconductor nanoislands on a substrate. Additional layers of Group II-VI semiconductor are grown on the nanoislands using MBE until the newly formed layers coalesce to form a uniform layer of a desired thickness. In an alternate embodiment, nanoholes are patterned into a silicon nitride layer to expose an elemental silicon surface of a substrate. Group II-VI semiconductor material is grown in the holes until the layers fill the holes and coalesce to form a uniform layer of a desired thickness. Suitable materials for the substrate include silicon and silicon on insulator materials and cadmium telluride may be used as the Group II-VI semiconductor.
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