PROCESS FOR FORMING HIGH RESISTIVITY THIN METALLIC FILM
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United States of America Patent
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Issued Date -
Jun 3, 2010
app pub date -
Dec 1, 2008
filing date -
Dec 1, 2008
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Abstract
A process for forming metallic nitride film by atomic layer deposition (ALD), which comprises steps for feeding into a reaction space vapor phase alternated pulses of metal source material and silicon source material in a plurality of cycles, and feeding into the reaction space vapor phase pulses of nitrogen source material. wherein a nitrogen source pulse is fed intermittently in selected cycles such that a ratio of nitrogen source pulses to silicon source pulses is less than 1:1 and a ratio of nitrogen source pulses to metal source pulses is less than 1:1, the ratio selected to produce the thin film with a resistivity between 1,000 μΩcm and 15,000 μΩcm.
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