SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF MANUFACTURE THEREOF
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United States of America Patent
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Issued Date -
Jun 3, 2010
app pub date -
Jun 30, 2008
filing date -
Jun 29, 2007
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Abandoned
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Abstract
A semiconductor device structure comprising a first bulk crystal semiconductor material and a second bulk crystal semiconductor material provided on a surface of the first bulk crystal semiconductor material with or without a deliberate intermediate region, the second bulk crystal semiconductor material being a Group II-VI material dissimilar to the first bulk crystal semiconductor material, wherein portions of the first and/or second bulk crystal semiconductor material have been selectively removed to produce a patterned area of reduced thickness of the first and/or second bulk crystal semiconductor and preferably to expose a patterned area of the said surface of the first and/or second bulk crystal semiconductor material.
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