METHOD FOR PROCESSING A SILICON-ON-INSULATOR STRUCTURE
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United States of America Patent
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Issued Date -
May 27, 2010
app pub date -
Nov 23, 2009
filing date -
Nov 26, 2008
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Abandoned
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Abstract
A method is disclosed for processing the cleaved surface of a silicon-on-insulator structure. The silicon-on-insulator structures comprises a handle wafer, a silicon layer, and a dielectric layer between the handle wafer and the silicon layer. The silicon layer has a cleaved surface defining an outer surface of the structure. The methods disclosed include an etching process to reduce the time and cost required to process the silicon-on-insulator structure to remove the surface damage and defects formed when a portion of the donor wafer is separated along a cleave plane from the silicon-on-insulator structure. The method includes, annealing the structure, etching the cleaved surface, and performing a non-contact smoothing process on the cleaved surface.
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