PRISMATIC SILICON AND METHOD OF PRODUCING SAME
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United States of America Patent
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Issued Date -
May 27, 2010
app pub date -
May 14, 2007
filing date -
Mar 16, 2007
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Abandoned
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Abstract
Silicon in prismatic shape is produced by using a silicon wafer with (110) surface and sequentially carrying out an alignment configuration forming step for forming alignment configurations having surfaces that are along two (111) surfaces perpendicular to a substrate surface inside the silicon wafer, a primary anisotropic etching step for forming perpendicular walls having wall surfaces aligned to one of these (111) surfaces, and a secondary anisotropic etching step for forming silicon in the prismatic shape having wall surfaces aligned to the other of these (111) surfaces with respect to the perpendicular walls.
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