Magnetic Data Storage
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United States of America Patent
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Issued Date -
May 27, 2010
app pub date -
Nov 13, 2009
filing date -
Nov 13, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention can provide a magnetic memory structure comprising a column comprising a plurality of layers of magnetic material, each sized to adopt a single magnetic domain state, and a plurality of layers of non-magnetic material arranged as spacer layers between adjacent ones of the layers of magnetic material, such that successive magnetic layers in the column are magnetically antiparallel coupled. The column is arranged to maintain therein a plurality of stable transitions of an order parameter of the magnetisations between the magnetic layers, the transitions having a chirality. This enables a single magnetic column structure to store multiple data bits in such a way as to enable the bits to be propagated through the column to enable sequential reading and/or writing of data in the column.
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