HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND A METHOD FOR FABRICATING THE SAME
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United States of America Patent
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Issued Date -
May 27, 2010
app pub date -
Nov 26, 2008
filing date -
Nov 26, 2008
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Abstract
The preset invention discloses a high-brightness LED structure and a method for fabricating the same. The LED structure of the present invention comprises a silicon substrate, a metal adhesion layer, a metal reflection layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, which are sequentially stacked. In the method of the present invention, the P-type semiconductor layer, active layer, N-type semiconductor layer and metal reflection layer are sequentially deposited on an N-type substrate; next, the metal reflection layer is bonded to the metal adhesion layer having been formed on the silicon substrate; then, the N-type substrate is removed. The present invention uses the silicon substrate to replace the light-absorptive GaAs substrate. Therefore, the present invention can promote light efficiency and enhance brightness.
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