Method for Forming a Nanostructure, a Nanostructure, and a Device Using the Same

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United States of America Patent

APP PUB NO 20100127206A1
SERIAL NO

12468586

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Abstract

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A method for forming a nanostructure, a nanostructure and a device using the nanostructure, wherein hydroxide ions are provided to a surface of a nanostructure including a piezoelectric material in order to etch an outer surface of the nanostructure. In an exemplary embodiment, the nanostructure may be etched by contacting the nanostructure with a basic solution. In other exemplary embodiments the etching of the nanostructure may be performed while controlling at least one of the concentration of the basic solution, the temperature of the basic solution and the etching time. The resultant nanostructure includes a piezoelectric material and has an etched outer surface. The nanostructure may be applied to various devices.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO KOREA SUWON
KUMOH NATIONAL INSTITUTE OF TECHNOLOGYYANGHO-DONG 1 GUMI-SI GYEONGSANGBUK-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHOI, Jaeyoung Yongin-si, KR 89 743
KIM, Sang Woo Gumi-si, KR 197 878

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