Assisted selective growth of highly dense and vertically aligned carbon nanotubes
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United States of America Patent
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Issued Date -
May 13, 2010
app pub date -
Apr 17, 2006
filing date -
Apr 17, 2006
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Abstract
The selective growth of vertically aligned, highly dense carbon nanotube (CNT) arrays using a thermal catalytic chemical vapor deposition (CCVD) method via selection of the supporting layer where the thin catalyst layer is deposited on. A thin iron (Fe) catalyst deposited on a supporting layer of tantalum (Ta) yielded CCVD growth of the vertical dense CNT arrays. Cross-sectional transmission electron microscopy revealed a Vollmer-Weber mode of Fe island growth on Ta, with a small contact angle of the islands controlled by the relative surface energies of the supporting layer, the catalyst and their interface. The as-formed Fe island morphology promoted surface diffusion of carbon atoms seeding the growth of the CNTs from the catalyst surface.
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