LIGHT MODULATION COMPRISING SI-GE QUANTUM WELL LAYERS
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United States of America Patent
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Issued Date -
May 13, 2010
app pub date -
Aug 7, 2007
filing date -
Aug 11, 2006
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Abandoned
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Abstract
barrier and well layers with different Ge contents x, are chosen in order to be strain compensated. The Ge content in the active structures may vary in a step-wise fashion along the growth direction or in the form of parabolas within the quantum well regions. Optical modulation may be achieved by a plurality of physical effects, such as the Quantum Confined or Optical Stark Effect, the Franz-Keldysh Effect, exciton quenching by hole injection, phase space filling, or temperature modulation. In a preferred method the modulator structures are grown epitaxially by low-energy plasma-enhanced chemical vapor deposition (LEPCVD).
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