Copper-gallium allay sputtering target, method for fabricating the same and related applications
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United States of America Patent
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Issued Date -
May 13, 2010
app pub date -
Nov 12, 2008
filing date -
Nov 12, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for fabricating a copper-gallium alloy sputtering target comprises forming a raw target; treating the raw target with at least one thermal treatment between 500° C.˜850° C. being mechanical treatment, thermal annealing treatment for 0.5˜5 hours or a combination thereof to form a treated target; and cooling the treated target to a room temperature to obtain the copper-gallium alloy sputtering target that has 71 atomic % to 78 atomic % of Cu and 22 atomic % to 29 atomic % of Ga and having a compound phase not more than 25% on its metallographic microstructure. Therefore, the copper-gallium alloy sputtering target does not induce micro arcing during sputtering so a sputtering rate is consistent and forms a uniform copper-gallium thin film. Accordingly, the copper-gallium thin film possesses improved quality and properties.
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International Classification(s)
- C23C:COATING METALLIC MATERIAL; COATING MATERIAL WITH M....
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- B22F:WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES F....
- C22F:CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS MET....
- B22D:CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY ....
- C21D:MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS....
- C22C:ALLOYS
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