INTEGRATED CIRCUIT SYSTEM EMPLOYING STRESS-ENGINEERED LAYERS

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United States of America Patent

APP PUB NO 20100109045A1
SERIAL NO

12262128

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Abstract

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An integrated circuit system that includes: providing a substrate including an active device; forming a trench within the substrate adjacent the active device; forming a first layer with a first lattice constant within the trench; and forming a second layer with a second lattice constant over the first layer, the second lattice constant differing from the first lattice constant.

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Patent Owner(s)

Patent OwnerAddress
CHARTERED SEMICONDUCTOR MANUFACTURING LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsia, Liang-Choo Singapore, SG 53 849
Li, Yisuo Singapore, SG 27 310
Liu, Jin Ping Singapore, SG 83 1122
See, Alex KH Singapore, SG 17 106
Zhou, Meisheng Singapore, SG 14 102

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