III-Nitride Semiconductor Light Emitting Device
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United States of America Patent
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app pub date -
Dec 29, 2009
filing date -
Oct 15, 2008
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Abstract
The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate, a plurality of III-nitride semiconductor layers positioned on the substrate and including an active layer which generates light by recombination of electrons and holes, and a surface scattering the light generated in the active layer, the scattering surface including a first surface which is etched and a second surface which caps the first surface.
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