Semiconductor Light Emitting Device and Method of Manufacturing the Same
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United States of America Patent
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Dec 23, 2009
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Jun 27, 2007
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Abandoned
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Abstract
The present disclosure relates to a semiconductor light-emitting device and a method of manufacturing the same, and more particularly, to a III-nitride semiconductor light-emitting device which improves external quantum efficiency by forming an irregular portion on a surface of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.
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